US 11,749,627 B2
Semiconductor package having a sidewall connection
Endruw Jahja, Zhubei (TW); and Cheng-Yang Su, Hukou Township, Hsinchu County (TW)
Assigned to STMICROELECTRONICS LTD, Kowloon (HK)
Filed by STMICROELECTRONICS LTD, Hong Kong (HK)
Filed on Oct. 28, 2021, as Appl. No. 17/513,541.
Application 17/513,541 is a continuation of application No. 16/706,594, filed on Dec. 6, 2019, granted, now 11,195,809.
Claims priority of provisional application 62/785,841, filed on Dec. 28, 2018.
Prior Publication US 2022/0051998 A1, Feb. 17, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/02 (2013.01) [H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/14183 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/92225 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a semiconductor die including a first surface, a second surface opposite to the first surface, a first sidewall surface transverse to the first and second surfaces;
a contact pad exposed from the first surface;
a first dielectric layer on the contact pad and extending from the contact pad to the first sidewall surface, the first dielectric layer including a second sidewall surface coplanar with the first sidewall surface;
a second dielectric layer on the contact pad and extending from the contact pad to the first and second sidewall surfaces, the second dielectric layer having a third sidewall surface coplanar with the first and second sidewall surfaces, the second dielectric layer having a surface facing away from the semiconductor die;
a mold protection layer on and covering the first, second, and third sidewall surfaces, the mold protection layer having an end surface facing away from the semiconductor die and a fourth sidewall surface transverse to the end surface of the mold protection layer;
a redistribution layer on the contact pad and extending from the contact pad to the mold protection layer, the redistribution layer covering the surface of the dielectric layer, the end surface of the mold protection layer, and the sidewall surface of the mold protection layer; and
a third dielectric layer on the redistribution layer and on the second dielectric layer, the third dielectric layer overlaps the contact pad and the first dielectric layer.