US 11,749,585 B2
High thermal conductivity, high modulus structure within a mold material layer of an integrated circuit package
Yiqun Bai, Chandler, AZ (US); Vipul Mehta, Chandler, AZ (US); John Decker, Tempe, AZ (US); and Ziyin Lin, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Feb. 28, 2020, as Appl. No. 16/805,392.
Prior Publication US 2021/0272878 A1, Sep. 2, 2021
Int. Cl. H01L 23/31 (2006.01); H01L 23/433 (2006.01); H01L 21/56 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/4334 (2013.01) [H01L 21/56 (2013.01); H01L 23/3185 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit assembly, comprising:
an electronic substrate;
at least one integrated circuit device electrically attached to the electronic substrate;
a mold material layer abutting the electronic substrate and substantially surrounding the at least one integrated circuit device; and
at least one structure within the mold material layer, wherein the at least one structure comprises a material having a modulus of greater than about 20 gigapascals and a thermal conductivity of greater than about 10 watts per meter-Kelvin.