US 11,749,563 B2
Interlayer dielectric layer
Joung-Wei Liou, Hsinchu (TW); Yi-Wei Chiu, Kaohsiung (TW); and Bo-Jhih Shen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 21, 2018, as Appl. No. 16/138,106.
Claims priority of provisional application 62/690,726, filed on Jun. 27, 2018.
Prior Publication US 2020/0006126 A1, Jan. 2, 2020
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76829 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76826 (2013.01); H01L 21/76828 (2013.01); H01L 21/76877 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
depositing, using an electron beam (e-beam) assisted deposition method, a dielectric layer on a surface of a substrate at a temperature between about 24° C. and about 300° C., wherein the dielectric layer, as-deposited by the e-beam assisted deposition method, comprises a dielectric constant lower than about 3.9 and a carbon atomic concentration between about 15% and about 20%;
forming pores in the dielectric layer;
treating the dielectric layer having pores in a gas mixture comprising additives to increase the carbon atomic concentration;
etching the dielectric layer having pores to form openings; and
filling the openings with a conductive material to form conductive structures.