CPC H01L 21/763 (2013.01) [H01L 21/26506 (2013.01); H01L 21/26526 (2013.01); H01L 21/26533 (2013.01); H01L 21/324 (2013.01); H01L 21/743 (2013.01); H01L 21/76267 (2013.01); H01L 21/76283 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/32 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 27/0629 (2013.01); H01L 29/1087 (2013.01)] | 20 Claims |
1. A method comprising:
amorphizing a crystal structure of a semiconductor substrate over a given depth to form amorphized semiconductor material; and
converting the amorphized semiconductor material to include a first layer of polycrystalline semiconductor material, a second layer of polycrystalline semiconductor material, and a first layer of single-crystal semiconductor material separating the first layer of polycrystalline semiconductor material from the second layer of polycrystalline semiconductor material.
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