US 11,749,559 B2
Bulk substrates with a self-aligned buried polycrystalline layer
Steven M. Shank, Jericho, VT (US); Anthony K. Stamper, Williston, VT (US); Ian McCallum-Cook, Burlington, VT (US); and Siva P. Adusumilli, South Burlington, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Nov. 9, 2022, as Appl. No. 17/983,436.
Application 17/983,436 is a division of application No. 17/086,925, filed on Nov. 2, 2020, granted, now 11,527,432.
Application 17/086,925 is a continuation of application No. 16/218,868, filed on Dec. 13, 2018, granted, now 10,832,940, issued on Nov. 10, 2020.
Application 16/218,868 is a continuation of application No. 15/935,606, filed on Mar. 26, 2018, granted, now 10,192,779, issued on Jan. 29, 2019.
Prior Publication US 2023/0063731 A1, Mar. 2, 2023
Int. Cl. H01L 21/763 (2006.01); H01L 29/06 (2006.01); H01L 27/12 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01); H01L 21/84 (2006.01); H01L 21/265 (2006.01); H01L 21/74 (2006.01); H01L 29/32 (2006.01); H01L 21/02 (2006.01); H01L 27/06 (2006.01); H01L 29/10 (2006.01)
CPC H01L 21/763 (2013.01) [H01L 21/26506 (2013.01); H01L 21/26526 (2013.01); H01L 21/26533 (2013.01); H01L 21/324 (2013.01); H01L 21/743 (2013.01); H01L 21/76267 (2013.01); H01L 21/76283 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/32 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 27/0629 (2013.01); H01L 29/1087 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
amorphizing a crystal structure of a semiconductor substrate over a given depth to form amorphized semiconductor material; and
converting the amorphized semiconductor material to include a first layer of polycrystalline semiconductor material, a second layer of polycrystalline semiconductor material, and a first layer of single-crystal semiconductor material separating the first layer of polycrystalline semiconductor material from the second layer of polycrystalline semiconductor material.