US 11,749,536 B2
Semiconductor device and method of fabricating the same
Byoungdeog Choi, Suwon-si (KR); and Jangseop Kim, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 23, 2021, as Appl. No. 17/355,478.
Application 17/355,478 is a division of application No. 16/399,098, filed on Apr. 30, 2019, granted, now 11,056,355, issued on Jul. 6, 2021.
Claims priority of application No. 10-2018-0118213 (KR), filed on Oct. 4, 2018.
Prior Publication US 2021/0320015 A1, Oct. 14, 2021
Int. Cl. H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/56 (2006.01)
CPC H01L 21/565 (2013.01) [H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bottom electrode on a substrate, the bottom electrode having a pillar shape;
a first support layer on a sidewall of the bottom electrode;
a second support layer above the first support layer and on the sidewall of the bottom electrode; and
a dielectric layer covering the sidewall and a top surface of the bottom electrode,
wherein the bottom electrode includes:
a lower segment between the first support layer and the second support layer; and
an upper segment between the lower segment and the second support layer, the upper segment having a sidewall that protrudes from a sidewall of the lower segment such that a center of the sidewall has a sharp point, and
wherein the bottom electrode has a concave segment which is a portion recessed from the top surface of the bottom electrode.