US 11,749,510 B2
Plasma generating device, substrate processing apparatus, and method of manufacturing semiconductor device
Akihiro Sato, Toyama (JP); Tsuyoshi Takeda, Toyama (JP); and Yukitomo Hirochi, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Mar. 12, 2021, as Appl. No. 17/200,414.
Application 17/200,414 is a continuation of application No. 16/250,673, filed on Jan. 17, 2019.
Application 16/250,673 is a continuation of application No. PCT/JP2017/012414, filed on Mar. 27, 2017.
Claims priority of application No. 2016-143285 (JP), filed on Jul. 21, 2016.
Prior Publication US 2021/0202216 A1, Jul. 1, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/509 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H05H 1/46 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01)
CPC H01J 37/32568 (2013.01) [C23C 16/4587 (2013.01); C23C 16/50 (2013.01); C23C 16/509 (2013.01); C23C 16/52 (2013.01); H01J 37/3244 (2013.01); H01J 37/32834 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H05H 1/46 (2013.01); H01J 2237/327 (2013.01); H01J 2237/3323 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A plasma generating device, comprising:
a plurality of first rod-shaped electrodes connected to a high-frequency power supply;
a second rod-shaped electrode that is installed between the plurality of first rod-shaped electrodes, and is grounded; and
a buffer structure configured to form a buffer chamber that accommodates the plurality of first rod-shaped electrodes and the second rod-shaped electrode,
wherein high-frequency power is applied from the high-frequency power supply to one of the plurality of first rod-shaped electrodes to convert gas into plasma in a plasma generation region between the one of the plurality of first rod-shaped electrodes and the second rod-shaped electrode,
wherein high-frequency power is applied from the high-frequency power supply to another one of the plurality of first rod-shaped electrodes to convert gas into plasma in a plasma generation region between the another one of the plurality of first rod-shaped electrodes and the second rod-shaped electrode,
wherein the buffer structure includes, on a side wall surface of the buffer structure facing one or more side surfaces of one or more substrates:
at least one first gas supply port located between the one of the plurality of first rod-shaped electrodes and the second rod-shaped electrode; and
at least one second gas supply port located between the another one of the plurality of first rod-shaped electrodes and the second rod-shaped electrode.