US 11,749,501 B2
Ion implantation apparatus
Jian Wang, Koka (JP); Shinsuke Inoue, Koka (JP); Yuta Iwanami, Koka (JP); Takashi Sakamoto, Koka (JP); and Weijiang Zhao, Koka (JP)
Assigned to NISSIN ION EQUIPMENT CO., LTD., Koka (JP)
Filed by NISSIN ION EQUIPMENT CO., LTD., Koka (JP)
Filed on Sep. 8, 2021, as Appl. No. 17/468,879.
Claims priority of application No. 2020-206842 (JP), filed on Dec. 14, 2020.
Prior Publication US 2022/0189736 A1, Jun. 16, 2022
Int. Cl. H01J 37/20 (2006.01); H01J 37/317 (2006.01); H01J 37/304 (2006.01)
CPC H01J 37/3171 (2013.01) [H01J 37/20 (2013.01); H01J 37/304 (2013.01); H01J 2237/31706 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An ion implantation apparatus comprising:
a transfer device that transfers a wafer;
a support device that supports the wafer at an implantation position; and
a control device that controls the ion implantation apparatus to perform ion implantation processing on the wafer over an entire surface of the wafer a plurality of times, while changing an implantation condition for each implantation of the entire surface of the wafer, and that controls-the transfer device or the support device according to warpage information of the wafer.