CPC H01J 37/3171 (2013.01) [H01J 37/20 (2013.01); H01J 37/304 (2013.01); H01J 2237/31706 (2013.01)] | 20 Claims |
1. An ion implantation apparatus comprising:
a transfer device that transfers a wafer;
a support device that supports the wafer at an implantation position; and
a control device that controls the ion implantation apparatus to perform ion implantation processing on the wafer over an entire surface of the wafer a plurality of times, while changing an implantation condition for each implantation of the entire surface of the wafer, and that controls-the transfer device or the support device according to warpage information of the wafer.
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