US 11,749,356 B2
Non-volatile memory device, a memory system that includes the non-volatile memory device, and an operating method of the non-volatile memory device
Jinyoung Kim, Seoul (KR); Sehwan Park, Yongin-si (KR); Youngdeok Seo, Seoul (KR); and Dongmin Shin, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 14, 2021, as Appl. No. 17/450,871.
Claims priority of application No. 10-2021-0017873 (KR), filed on Feb. 8, 2021.
Prior Publication US 2022/0254419 A1, Aug. 11, 2022
Int. Cl. G11C 16/30 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01); G11C 5/14 (2006.01)
CPC G11C 16/30 (2013.01) [H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); G11C 5/147 (2013.01); G11C 5/148 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01)] 20 Claims
OG exemplary drawing
 
9. A memory system comprising:
a non-volatile memory device including a machine learning (ML) module and a peripheral power management integrated circuit (IC); and
a memory controller configured to command the non-volatile memory device to enter an idle mode by providing an external power command to the non-volatile memory device,
wherein the machine learning (ML) module configures a neural network and trains the neural network via machine learning, and the peripheral power management IC is configured to generate an internal power command that is different from the external power command based on the external power command and monitoring information corresponding to the ML module.