CPC G11C 16/26 (2013.01) [G06N 3/04 (2013.01); G06N 3/08 (2013.01); G11C 11/56 (2013.01); G11C 16/10 (2013.01); G06F 11/1068 (2013.01); G11C 16/0483 (2013.01); G11C 16/3459 (2013.01)] | 14 Claims |
1. A memory system comprising:
a memory device including a plurality of cells; and
a controller configured to:
generate multiple optimal read threshold voltages corresponding to multiple sets of two cumulative distribution function (CDF) values, respectively;
perform read operations on the cells using a plurality of read threshold voltages;
generate cumulative mass function (CMF) samples based on the results of the read operations;
receive first and second CDF values, selected from among a plurality of CDF values, each CDF value corresponding to each CMF sample; and
estimate an optimal read threshold voltage corresponding to the first and second CDF values, among the multiple optimal read threshold voltages.
|