US 11,749,320 B2
Storage device and control method thereof
Po-Yuan Tang, Hsinchu (TW); Yang-Sen Yeh, Baoshan Township (TW); and Hsuan-Chi Su, Cyonglin Township (TW)
Assigned to Vanguard International Semiconductor Corporation, Hsinchu (TW)
Filed by Vanguard International Semiconductor Corporation, Hsinchu (TW)
Filed on Dec. 17, 2021, as Appl. No. 17/554,512.
Prior Publication US 2023/0197126 A1, Jun. 22, 2023
Int. Cl. G11C 7/10 (2006.01)
CPC G11C 7/1096 (2013.01) [G11C 7/1069 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device comprising:
a cell array comprising a first cell and a second cell, wherein the first cell is coupled to a first conductive line and a specific conductive line, and the second cell is coupled to a second conductive line and the specific conductive line; and
a disturb-free circuit performing a first write operation on the first cell and performing a verification operation on the second cell,
wherein:
the verification operation determines whether data stored in the second cell is disturbed by the first write operation, and
in response to the data stored in the second cell being disturbed by the first write operation, the disturb-free circuit performs a second write operation on the second cell.