US 11,748,025 B2
Nonvolatile memory device, data storage device including the same and operating method thereof
Jee Yul Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jun. 30, 2021, as Appl. No. 17/363,521.
Application 17/363,521 is a division of application No. 16/217,682, filed on Dec. 12, 2018, granted, now 11,074,006.
Claims priority of application No. 10-2018-0023693 (KR), filed on Feb. 27, 2018.
Prior Publication US 2021/0326060 A1, Oct. 21, 2021
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/061 (2013.01); G06F 3/0679 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A nonvolatile memory device comprising:
a memory cell array operated by a first voltage, and comprising a plurality of memory cells;
a peripheral circuit operated by the first voltage, and configured to store data in the memory cell array or read data from the memory cell array;
an operation recorder operated by a second voltage, and configured to record information on an operation being performed in the nonvolatile memory device; and
a control logic operated by the first voltage, and configured to control the peripheral circuit such that the nonvolatile memory device performs an operation corresponding to a command received from an external device, and control the operation recorder to store the information on the operation being performed in the nonvolatile memory device; and
an input/output (I/O) interface operated by the second voltage, and configured to transmit data to, and receive data from, the external device,
wherein, when the nonvolatile memory device is powered off due to an interruption to supply of the first voltage, the I/O interface provides an information request command received from the external device to the operation recorder, and the operation recorder provides the recorded operation information to the external device through the I/O interface in response to the information request command received from the external device.