US 11,747,704 B2
Integration of electronics with lithium niobate photonics
Moe Soltani, Belmont, MA (US); Jeffrey Laroche, Andover, MA (US); and Thomas Kazior, Sudbury, MA (US)
Assigned to Raytheon BBN Technologies Corp., Cambridge, MA (US)
Filed by Raytheon BBN Technologies Corp., Cambridge, MA (US)
Filed on Apr. 28, 2022, as Appl. No. 17/731,369.
Application 17/731,369 is a division of application No. 16/859,454, filed on Apr. 27, 2020, granted, now 11,340,512.
Prior Publication US 2022/0252956 A1, Aug. 11, 2022
Int. Cl. G02F 1/225 (2006.01); G02F 1/00 (2006.01); G02F 1/03 (2006.01); G02F 1/015 (2006.01)
CPC G02F 1/225 (2013.01) [G02F 1/0018 (2013.01); G02F 1/0316 (2013.01); G02F 1/0152 (2021.01)] 12 Claims
OG exemplary drawing
 
1. A method of manufacturing an electro-optical modulator assembly, the method comprising:
providing a transistor including a gate, a drain, and a source disposed on a first substrate;
providing a photonic modulator including a first waveguide structure positioned between a first electrode and a second electrode, the photonic modulator being disposed on a second substrate;
depositing a first oxide layer over the gate, the drain, and the source of the transistor; and
bonding the first oxide layer of the transistor to a second oxide layer of the photonic modulator such that the photonic modulator is integrated with the transistor on the first substrate and the photonic modulator is disposed over a film forming a channel layer for the transistor, the photonic modulator occupying an area that is non-overlapping with an area occupied by the transistor.