US 11,747,556 B2
Integrated circuit device including photoelectronic element
Jung-hye Kim, Hwaseong-si (KR); Keun-yeong Cho, Suwon-si (KR); and Ho-chul Ji, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 28, 2022, as Appl. No. 17/706,443.
Application 17/706,443 is a division of application No. 16/565,076, filed on Sep. 9, 2019, granted, now 11,287,570.
Claims priority of application No. 10-2018-0120610 (KR), filed on Oct. 10, 2018.
Prior Publication US 2022/0221646 A1, Jul. 14, 2022
Int. Cl. G02B 6/12 (2006.01); G02B 6/124 (2006.01)
CPC G02B 6/12004 (2013.01) [G02B 6/124 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12107 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12123 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) device comprising:
an optical IC substrate including a first silicon layer and a buried insulating layer, the buried insulating layer being on and having a bottom surface in contact with the uppermost surface of the first silicon layer;
a local trench formed within the buried insulating layer; and
a photoelectronic element including a photoelectric conversion layer formed within the local trench, the photoelectric conversion layer being spaced apart from the first silicon layer of the optical IC substrate by the buried insulating layer; and
an optical waveguide core layer,
wherein a top surface of the photoelectric conversion layer is at a lower level than a first top surface of the optical waveguide core layer in a vertical direction on the optical IC substrate, and the photoelectric conversion layer is formed to extend over a second top surface of the optical waveguide core layer.