US 11,747,393 B2
Integrated circuit device, semiconductor substrate, and test system including the integrated circuit device
Daehyun Kwon, Hwaseong-si (KR); Donghee Kim, Seoul (KR); and Sungoh Huh, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 24, 2022, as Appl. No. 17/703,535.
Claims priority of application No. 10-2021 -0042815 (KR), filed on Apr. 1, 2021.
Prior Publication US 2022/0317179 A1, Oct. 6, 2022
Int. Cl. G01R 31/28 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2023.01)
CPC G01R 31/2884 (2013.01) [H01L 23/481 (2013.01); H01L 23/5227 (2013.01); H01L 25/0655 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device including a plurality of layers, the integrated circuit device comprising:
a power terminal configured to accept a source voltage to be supplied;
a power via connected to the power terminal passing through at least one of the plurality of layers;
a plurality of inductive vias disposed about said power via and passing through at least one of said plurality of layers;
a plurality of wirings connected to ends of at least some of said plurality of inductive vias and configured to form with said inductive vias a coil wound in a toroidal form around said power via; and
a plurality of test terminals, each configured accept a voltage induced in said coil to be output externally of the integrated circuit device, in response to the supply of the source voltage to the power via.