US 11,747,008 B2
Deep ultraviolet light source
Jianping Zhang, San Jose, CA (US); Ling Zhou, San Jose, CA (US); Ying Gao, San Jose, CA (US); Huazhong Deng, San Jose, CA (US); Alex Lunev, San Jose, CA (US); and Cuong Le, San Jose, CA (US)
Assigned to BOLB INC., Livermore, CA (US)
Filed by BOLB INC., San Jose, CA (US)
Filed on Mar. 10, 2021, as Appl. No. 17/197,721.
Prior Publication US 2022/0290851 A1, Sep. 15, 2022
Int. Cl. F21V 29/60 (2015.01); F21V 7/04 (2006.01); F21V 29/51 (2015.01); F21V 29/76 (2015.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01); H01L 33/58 (2010.01); H01L 25/075 (2006.01); F21Y 105/10 (2016.01); F21Y 115/10 (2016.01)
CPC F21V 29/60 (2015.01) [F21V 7/041 (2013.01); F21V 29/51 (2015.01); F21V 29/767 (2015.01); H01L 25/0753 (2013.01); H01L 33/486 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); F21Y 2105/10 (2016.08); F21Y 2115/10 (2016.08)] 18 Claims
OG exemplary drawing
 
1. A DUV light source module comprising a print circuit board, an array of DUV light-emitting diodes (LEDs), a plurality of DUV LED drivers for driving the DUV light-emitting diodes, and a pair of electrical connectors for connecting the DUV LED drivers, hence the DUV light-emitting diodes, to a power source,
wherein the array of DUV light-emitting diodes comprises an integrated silicon (Si) submount and a plurality of LED chips, the integrated silicon submount is electrical insulating and contains an array of cavities with slanted reflective sidewall; each of the LED chips is disposed in a corresponding cavity of the array of cavities, respectively; and the integrated silicon submount is bonded on the print circuit board,
wherein the DUV light-emitting diodes are connected in an m×n matrix, including n branches of LEDs connected in parallel, each branch of LEDs contains m DUV LEDs connected in series and has its own DUV LED driver.