US 11,746,438 B2
Method for preparing an optical ZnS material from zinc and sulfur raw material sources by using a feeding device to replenish the sulfur raw material source
Xun Qian, Beijing (CN); Cunxin Huang, Beijing (CN); Hongtao Xiao, Beijing (CN); Xu Zhang, Beijing (CN); and Kehong Zhang, Beijing (CN)
Assigned to Sinoma Synthetic Crystals Co., Ltd., Beijing (CN); and Beijing Sinoma Synthetic Crystals Co., Ltd., Beijing (CN)
Filed by Sinoma Synthetic Crystals Co., Ltd., Beijing (CN); and Beijing Sinoma Synthetic Crystals Co., Ltd., Beijing (CN)
Filed on Dec. 10, 2021, as Appl. No. 17/547,730.
Claims priority of application No. 202011457261.8 (CN), filed on Dec. 11, 2020.
Prior Publication US 2022/0186400 A1, Jun. 16, 2022
Int. Cl. C30B 25/10 (2006.01); C30B 29/46 (2006.01); C30B 25/00 (2006.01); C30B 35/00 (2006.01)
CPC C30B 29/46 (2013.01) [C30B 25/00 (2013.01); C30B 25/10 (2013.01); C30B 35/002 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method for preparing an optical ZnS material, comprising:
charging a zinc raw material and a sulfur raw material into a first crucible and a feeding device of a chemical vapor deposition furnace respectively, wherein the feeding device is in communication with a second crucible of the chemical vapor deposition furnace, and the first crucible and the second crucible are located in different furnace bodies of the chemical vapor deposition furnace;
heating the first crucible, the second crucible and a deposition chamber of the chemical vapor deposition furnace, and charging the sulfur into the second crucible through the feeding device after the first crucible is heated to 560-640° C., the second crucible is heated to 230-290° C. and the deposition chamber is heated to 560-640° C.;
introducing an inert carrier gas into the first crucible and a mixed gas of an inert carrier gas and hydrogen into the second crucible after the zinc and the sulfur are melted, flowing the carrier gases containing a zinc vapor and a sulfur vapor respectively into the deposition chamber through pipelines to deposit ZnS on a deposition substrate in the deposition chamber, and supplying the sulfur to the second crucible through the feeding device during the deposition process regularly and quantitatively, to maintain a saturated vapor pressure of sulfur in a range of 0.8 to 1.8 KPa; and
wherein the feeding device comprises a feeder and a feeding controller.