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1. A plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, the apparatus comprising: a process station configured for deposition of a first and second films on the substrate, the first and second films having qualitatively different chemical compositions, wherein the process station comprises a substrate support for holding the substrate during the film depositions, and a gas inlet for introduction of a first reactant mixture gas used in the deposition of the first film, and of a second reactant mixture gas used in the deposition of the second film; a plasma source configured to supply a plasma to the process station; and a process station reactant feed fluidically coupled to the gas inlet of the process station, wherein the process station reactant feed is configured to supply, via a shared delivery path, an inert gas, a first reactant mixture gas, and a second reactant mixture gas to the process station, wherein the process station reactant feed is further fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line, such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed; and a controller comprising program instructions configured to deposit the first and the second films on the substrate, the first and second films having qualitatively different chemical compositions, such that there is no vacuum break between the film deposition phases, wherein the program instructions comprise program instructions for supplying via the shared delivery path, the inert gas, the first reactant mixture gas, and the second reactant mixture gas to the process station.
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