CPC C23C 16/45502 (2013.01) [C23C 16/27 (2013.01); C23C 16/448 (2013.01); C23C 16/4488 (2013.01); C23C 16/4557 (2013.01); C23C 16/45578 (2013.01); C30B 25/10 (2013.01); C30B 25/14 (2013.01); C30B 25/165 (2013.01); C30B 29/04 (2013.01)] | 18 Claims |
1. A method for applying a carbon layer to a substrate by chemical vapor deposition, said method comprising:
introducing a process gas into a deposition chamber via a gas inlet and gas activation element, the gas inlet and gas activation element comprising a hollow body having a flow channel for the process gas, a wall surrounding the flow channel, and an outlet opening feeding from the flow channel into the deposition chamber;
heating the wall of the gas inlet and gas activation element so that the process gas flowing in the flow channel of the gas inlet and gas activation element is excited by impact excitation and thermal excitation; and
introducing a carbon-containing process gas into the deposition chamber via a further gas inlet element, the further gas inlet element is above the wall surrounding the flow channel and directs the carbon-containing process gas downward and directly to the wall surrounding the flow channel so that the carbon-containing process gas is thermally excited by flowing over the gas inlet and gas activation element, the carbon-containing process gas that is thermally excited flows downwards to the substrate, and
termination bodies are attached to ends of the gas inlet and gas activation element in order to close off the flow channel.
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