CPC C23C 16/303 (2013.01) [C23C 16/34 (2013.01); C23C 16/405 (2013.01); C23C 16/45534 (2013.01); C23C 16/45544 (2013.01); H01L 21/28568 (2013.01); H01L 21/76841 (2013.01)] | 15 Claims |
1. A method for forming a thin film comprising steps of:
i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate, the growth inhibitor for forming a thin film being represented by Chemical Formula 1 below; and
ii) adsorbing a Ti-based thin film precursor on a surface of a substrate on which the growth inhibitor is adsorbed:
AnBmXo [Chemical Formula 1]
wherein A is carbon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1,
wherein the growth inhibitor comprises one or more selected from the group consisting of 2-chloro-2-methylbutane, n-butyl chloride, 2-chloropropane, 1,2,3-trichloropropane, 2-methyl-1-pentane and 1,2-dichlorobenzene.
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