CPC C23C 14/3414 (2013.01) [B22F 3/1028 (2013.01); B22F 3/16 (2013.01); B22F 3/17 (2013.01); C22C 1/045 (2013.01); C22C 1/0433 (2013.01); C22C 19/03 (2013.01); C22C 27/04 (2013.01); C22F 1/10 (2013.01); C22F 1/18 (2013.01); C23C 14/14 (2013.01); G02F 1/1524 (2019.01); H01J 37/3429 (2013.01); B22F 2998/10 (2013.01)] | 7 Claims |
1. A process of using a sputtering target, the process comprising the following steps:
using a sputtering target having from 45 to 75% by weight of W, a balance of Ni and normal impurities, a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section, for deposition of an electrochromic layer; and
producing the sputtering target by at least compacting a powder mixture of W powder and Ni powder by application of pressure, heat or pressure and heat to provide a resulting blank, and cooling the resulting blank at a cooling rate of greater than 30 K/min at least in a temperature range of from 900 to 750° C.
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