CPC C09K 11/06 (2013.01) [C09K 11/54 (2013.01); H10K 85/10 (2023.02); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C09K 2211/10 (2013.01); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/18 (2023.02)] | 20 Claims |
1. A quantum dot light emitting diode, comprising an anode layer, a cathode layer, a quantum dot light emitting layer disposed between the anode layer and the cathode layer, and an electron transport layer disposed between the quantum dot light emitting layer and the cathode layer, wherein,
the quantum dot light emitting diode further comprises an electron blocking layer disposed between the electron transport layer and the quantum dot light emitting layer,
the electron blocking layer and the electron transport layer are coupled through siloxane bonds,
the electron blocking layer and the quantum dot light emitting layer are coupled through metal-sulfur bonds, and
the metal sulfur bonds contain metal elements from the quantum dot light emitting layer and sulfur elements from the electron blocking layer.
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