US 11,746,287 B2
Quantum dot light emitting diode, manufacturing method thereof, and display device
Aidi Zhang, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed by Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed on Mar. 26, 2021, as Appl. No. 17/214,114.
Claims priority of application No. 202010862979.9 (CN), filed on Aug. 25, 2020.
Prior Publication US 2022/0064523 A1, Mar. 3, 2022
Int. Cl. C09K 11/06 (2006.01); C09K 11/54 (2006.01); H10K 85/10 (2023.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/18 (2023.01)
CPC C09K 11/06 (2013.01) [C09K 11/54 (2013.01); H10K 85/10 (2023.02); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C09K 2211/10 (2013.01); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/18 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A quantum dot light emitting diode, comprising an anode layer, a cathode layer, a quantum dot light emitting layer disposed between the anode layer and the cathode layer, and an electron transport layer disposed between the quantum dot light emitting layer and the cathode layer, wherein,
the quantum dot light emitting diode further comprises an electron blocking layer disposed between the electron transport layer and the quantum dot light emitting layer,
the electron blocking layer and the electron transport layer are coupled through siloxane bonds,
the electron blocking layer and the quantum dot light emitting layer are coupled through metal-sulfur bonds, and
the metal sulfur bonds contain metal elements from the quantum dot light emitting layer and sulfur elements from the electron blocking layer.