US 11,746,258 B2
CMP slurry composition for copper films and method of polishing copper films using the same
Hyeong Mook Kim, Suwon-si (KR); Keun Sam Jang, Suwon-si (KR); Dong Hun Kang, Suwon-si (KR); and Jong Won Lee, Suwon-si (KR)
Assigned to SAMSUNG SDI CO., LTD., Yongin-si (KR)
Filed by SAMSUNG SDI CO., LTD., Yongin-si (KR)
Filed on Oct. 16, 2020, as Appl. No. 17/72,385.
Claims priority of application No. 10-2019-0130274 (KR), filed on Oct. 18, 2019.
Prior Publication US 2021/0115296 A1, Apr. 22, 2021
Int. Cl. C09G 1/02 (2006.01); C09K 13/06 (2006.01); C23F 3/00 (2006.01); H01L 21/321 (2006.01); C01B 33/12 (2006.01)
CPC C09G 1/02 (2013.01) [C09K 13/06 (2013.01); C23F 3/00 (2013.01); H01L 21/3212 (2013.01); C01B 33/12 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A chemical mechanical polishing (CMP) slurry composition for copper films, the composition comprising:
a polar solvent or a non-polar solvent; and
polishing particles modified using a silicon-containing compound,
wherein the silicon-containing compound is represented by Formula 1,

OG Complex Work Unit Chemistry
wherein, in Formula 1,
R1, R2 and R3 are each independently a hydroxyl group, a substituted or unsubstituted alkoxy group, or a halogen;
R4 is a substituted or unsubstituted bivalent organic group;
X1 and X2 are each independently hydrogen, —(C═O)O−M+, a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O−M+, a substituted or unsubstituted aromatic hydrocarbon group containing at least one —(C═O)O−M+, a substituted or unsubstituted aliphatic hydrocarbon group free from —(C═O)O−M+, or a substituted or unsubstituted aromatic hydrocarbon group free from —(C═O)O−M+,
M+ is H+ or a monovalent cation of an alkali metal,
at least one of X1 and X2 is —(C═O)O−M+, a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O−M+, or a substituted or unsubstituted aromatic hydrocarbon group containing at least one —(C═O)O−M+.