	US 11,746,257 B2
	Chemical mechanical polishing solution
Jian Ma, Shanghai (CN); Jianfen Jing, Shanghai (CN); Junya Yang, Shanghai (CN); Kai Song, Shanghai (CN); Xinyuan Cai, Shanghai (CN); Guohao Wang, Shanghai (CN); Ying Yao, Shanghai (CN); and Pengcheng Bian, Shanghai (CN)
Assigned to Anji Microelectronics (Shanghai) Co., Ltd., Shanghai (CN)
Appl. No. 16/958,391
Filed by Anji Microelectronics (Shanghai) Co., Ltd., Shangai (CN)
PCT Filed Dec. 26, 2018, PCT No. PCT/CN2018/124049 § 371(c)(1), (2) Date Dec. 1, 2020, PCT Pub. No. WO2019/129103, PCT Pub. Date Jul. 4, 2019.
Claims priority of application No. 201711439569.8 (CN), filed on Dec. 27, 2017.
Prior Publication US 2021/0139740 A1, May 13, 2021
Int. Cl. C09G 1/02 (2006.01); H01L 21/306 (2006.01); H01L 21/321 (2006.01)

CPC C09G 1/02 (2013.01) [H01L 21/30625 (2013.01); H01L 21/3212 (2013.01)]

16 Claims

1. A chemical mechanical polishing slurry for polishing copper, characterized in that the chemical mechanical polishing slurry consists of silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, water and at least one kind of polyacrylic acid anionic surfactant,

wherein the corrosion inhibitor is one or more azole compounds selected from triazoles and tetrazoles that do not contain a benzene moiety;

wherein the complexing agent is one or more selected from the group consisting of glycine, alanine, valine, leucine, proline, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine, aspartic acid, glutamic acid, asparagine and glutamine,

wherein an average particle size of the silica abrasive particles is 60-140 nm,

wherein a particle size distribution index (PdI) of the silica abrasive particles is 0.18-0.60, and

wherein a pH of the chemical mechanical polishing slurry is 6-9.