US 11,746,005 B2
Deep reactive ion etching process for fluid ejection heads
David L. Bernard, Lexington, KY (US)
Assigned to FUNAI ELECTRIC CO. LTD
Filed by FUNAI ELECTRIC CO., LTD., Osaka (JP)
Filed on Mar. 4, 2021, as Appl. No. 17/192,294.
Prior Publication US 2022/0281740 A1, Sep. 8, 2022
Int. Cl. B81C 1/00 (2006.01); B41J 2/14 (2006.01); B41J 2/16 (2006.01); B81B 1/00 (2006.01)
CPC B81C 1/00087 (2013.01) [B41J 2/14 (2013.01); B41J 2/162 (2013.01); B41J 2/1629 (2013.01); B81B 1/002 (2013.01); B81B 2201/052 (2013.01); B81B 2203/0353 (2013.01); B81C 2201/0132 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An ejection head chip for a fluid ejection device comprising, a silicon substrate and a fluid ejector stack deposited on the silicon substrate, wherein at least one metal layer of the fluid ejector stack is isolated from a fluid supply via etched in the ejection head chip by an encapsulating material, wherein the encapsulating material comprises silicon oxide or silicon dioxide derived from a chemical vapor deposition of an organic silicon compound.