US 11,746,004 B2
Low-parasitic capacitance MEMS inertial sensors and related methods
Charles Blackmer, Londonderry, NH (US); Jeffrey A. Gregory, Malden, MA (US); Nikolay Pokrovskiy, Billerica, MA (US); and Bradley C. Kaanta, Belmont, MA (US)
Assigned to Analog Devices, Inc., Wilmington, MA (US)
Filed by Analog Devices, Inc., Wilmington, MA (US)
Filed on Feb. 9, 2022, as Appl. No. 17/668,326.
Application 17/668,326 is a division of application No. 16/457,865, filed on Jun. 28, 2019, granted, now 11,279,614.
Prior Publication US 2022/0162059 A1, May 26, 2022
Int. Cl. B81C 1/00 (2006.01); G01C 19/5755 (2012.01); G01P 15/08 (2006.01)
CPC B81C 1/00063 (2013.01) [B81C 1/00166 (2013.01); G01C 19/5755 (2013.01); G01P 15/0802 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a microelectromechanical system (MEMS) inertial sensor, the method comprising:
etching a substrate to form a plurality of columns of semiconductor material spaced from one another by a plurality of interstices including a first interstice;
oxidizing the plurality of columns of semiconductor material to fill at least a portion of the first interstice with an oxide material;
forming an electrode over the oxide material; and
forming a proof mass suspended over the substrate.