CPC B81C 1/00063 (2013.01) [B81C 1/00166 (2013.01); G01C 19/5755 (2013.01); G01P 15/0802 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01)] | 20 Claims |
1. A method for fabricating a microelectromechanical system (MEMS) inertial sensor, the method comprising:
etching a substrate to form a plurality of columns of semiconductor material spaced from one another by a plurality of interstices including a first interstice;
oxidizing the plurality of columns of semiconductor material to fill at least a portion of the first interstice with an oxide material;
forming an electrode over the oxide material; and
forming a proof mass suspended over the substrate.
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