| CPC B05B 12/12 (2013.01) [B05B 12/04 (2013.01); B05B 13/02 (2013.01); C01B 7/191 (2013.01); C09K 13/08 (2013.01); C23F 1/02 (2013.01); C23F 1/12 (2013.01); H01L 21/02049 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/30621 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01); H01L 21/67248 (2013.01); H01L 21/67109 (2013.01); H01L 21/68742 (2013.01)] | 20 Claims |
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1. A system for removing material on a substrate, comprising:
a process chamber configured to enable a process environment at less than atmospheric pressure;
a temperature controlled substrate holder mounted within the process chamber, and configured to control a temperature of the substrate when the substrate is resting on an upper surface of the temperature controlled substrate holder;
a vacuum pumping system coupled to the process chamber;
a chemical treatment system coupled to the process chamber and configured to introduce a HF gas and at least one other process gas separately into the process chamber where the substrate is resting on the upper surface of the temperature controlled substrate holder;
a thermal treatment system coupled to the process chamber and configured to elevate the temperature of the substrate in the process chamber, wherein the thermal treatment system comprises a window, the window being substantially transparent to infrared electromagnetic radiation;
a lift pin assembly which lifts the substrate off the temperature controlled substrate holder during a thermal treatment by the thermal treatment system;
a backside gas supply system which supplies a gas to a backside of the substrate when the substrate is lifted off the temperature controlled substrate holder by the lift pin assembly during the thermal treatment by the thermal treatment system; and
a controller operably coupled to the lift pin assembly, the backside gas supply system, the temperature controlled substrate holder, the chemical treatment system, and the thermal treatment system and configured to control the amount of the HF gas and the at least other process gas introduced into the process chamber, and the temperature to which the substrate is set, wherein the controller is configured to:
(i) perform a step to chemically treat the substrate in a non-plasma environment within the process chamber using the chemical treatment system by exposing the substrate to the HF and the at least one other process gas selected to chemically alter exposed surface layers on the substrate, wherein the HF gas is introduced independently from the at least one other process gas, and wherein the chemical treatment system is controlled to prevent condensation of process gases, and the substrate is maintained by the temperature controlled substrate holder in a range 10 degrees C. or greater and less than 100 degrees C.,
(ii) following the step to chemically treat, perform a step to thermally treat the substrate within the process chamber using the thermal treatment system by heating the substrate to a temperature sufficient to cause evaporation of the chemically altered surface layers, wherein the substrate temperature is elevated to a temperature greater than 100 degrees C. during the thermally treating, the step to chemically treat and the step to thermally treat being performed in tandem to remove material from the substrate,
(iii) control the lift pin assembly to raise the substrate to be in a raised position separated from the substrate holder during the step to thermally treat the substrate, and
(iv) with the substrate in the raised position, control the backside gas supply system to supply gas toward the substrate during the step to thermally treat the substrate,
wherein the controller is further configured to alternate the step to chemically treat and the step to thermally treat until a predetermined amount of material is removed from the substrate.
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