US 11,735,689 B2
Dielectric-dielectric and metallization bonding via plasma activation and laser-induced heating
Daniel Brodoceanu, Cork (IE); Oscar Torrents Abad, Blarney (IE); Jeb Wu, Redmond, WA (US); Zheng Sung Chio, Cork (IE); Sharon Nannette Farrens, Glounthaune (IE); Ali Sengul, Zurich (CH); and Tennyson Nguty, Grenoble (FR)
Assigned to Meta Platforms Technologies, LLC, Menlo Park, CA (US)
Filed by Facebook Technologies, LLC, Menlo Park, CA (US)
Filed on May 23, 2022, as Appl. No. 17/751,090.
Application 17/751,090 is a division of application No. 16/748,689, filed on Jan. 21, 2020, granted, now 11,374,148.
Claims priority of provisional application 62/869,908, filed on Jul. 2, 2019.
Claims priority of provisional application 62/869,905, filed on Jul. 2, 2019.
Claims priority of provisional application 62/861,949, filed on Jun. 14, 2019.
Claims priority of provisional application 62/861,938, filed on Jun. 14, 2019.
Claims priority of provisional application 62/860,219, filed on Jun. 11, 2019.
Prior Publication US 2022/0352412 A1, Nov. 3, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 33/52 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 23/00 (2006.01); G02B 27/01 (2006.01)
CPC H01L 33/0095 (2013.01) [H01L 24/75 (2013.01); H01L 24/83 (2013.01); H01L 25/0753 (2013.01); H01L 33/52 (2013.01); H01L 33/62 (2013.01); G02B 27/0172 (2013.01); G02B 2027/0178 (2013.01); H01L 2224/757 (2013.01); H01L 2224/7555 (2013.01); H01L 2224/75253 (2013.01); H01L 2224/75261 (2013.01); H01L 2224/75263 (2013.01); H01L 2224/75702 (2013.01); H01L 2224/8312 (2013.01); H01L 2224/83031 (2013.01); H01L 2224/83092 (2013.01); H01L 2224/83099 (2013.01); H01L 2224/83224 (2013.01); H01L 2224/83444 (2013.01); H01L 2224/83859 (2013.01); H01L 2224/83895 (2013.01); H01L 2224/83896 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system for coupling a semiconductor device to a target substrate, wherein the semiconductor device includes a first surface and a first contact disposed on the first surface, the target substrate includes a second surface and a second contact, and the system comprises:
a fabrication apparatus that:
forms a first insulating layer on the first surface, wherein the first insulating layer covers a portion of the first surface and exposes a distal portion of the first contact; and
forms a second insulating layer on the second surface that at least partially forms a recessed void on the second surface such that the second contact is at least partially disposed within the recessed void, wherein the second insulating layer covers a portion of the second surface and exposes a distal portion of the second contact;
a plasma apparatus that:
exposes the first insulating layer and the second insulating layer to a plasma that activates each of the first insulating layer and the second insulating layer;
a pick and place head (PPH) that:
positions the semiconductor device proximate to the target substrate to form a spatial alignment of the first contact with the second contact, wherein the activated first and second insulating layers are adjacent and opposed layers, and the exposed distal portion of the second contact is adjacent the exposed distal portion of the first contact; and
applies a compressive force to at least one of the semiconductor device or the target substrate to form a mechanical coupling between the semiconductor device and the target substrate by chemically bonding the activated first insulating layer to the activated second insulating layer, wherein the compressive force deforms a shape of the second contact such that the deformed shape of the second contact at least partially fills the recessed void; and
an electrical coupling apparatus that:
forms an electrical coupling between the semiconductor device and the target substrate by electrically bonding the exposed distal portion of the second contact to the adjacent distal portion of the first contact via inducing thermal energy with associated thermal effects that are localized to the first and second contacts, wherein the mechanical coupling between the semiconductor device and the target substrate mechanically stabilizes the electrical coupling.