US 11,735,473 B2
Methods for forming memory devices, and associated devices and systems
Jukuan Zheng, Boise, ID (US); Sri Sai Sivakumar Vegunta, Boise, ID (US); Kevin L. Baker, Boise, ID (US); Josiah Jebaraj Johnley Muthuraj, Meridian, ID (US); and Efe S. Ege, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 11, 2021, as Appl. No. 17/524,638.
Application 17/524,638 is a division of application No. 16/780,594, filed on Feb. 3, 2020, granted, now 11,201,083.
Claims priority of provisional application 62/955,927, filed on Dec. 31, 2019.
Prior Publication US 2022/0068702 A1, Mar. 3, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/67 (2006.01); G11C 5/06 (2006.01); H10B 12/00 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H01L 21/7684 (2013.01) [G11C 5/06 (2013.01); H01L 21/67075 (2013.01); H10B 12/09 (2023.02); H10B 63/00 (2023.02); H10N 70/801 (2023.02); H10N 70/882 (2023.02); H10N 70/883 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a memory device including a plurality of memory cells operably coupled to corresponding ones of a plurality of selectors, the method comprising:
removing a protection layer formed over the memory cells;
forming a cap layer over the memory cells;
depositing a first insulative material over the cap layer;
removing a portion of the memory cells, the selectors, the cap layer, and the first insulative material to form a socket;
depositing a second insulative material in the socket;
forming a conductive via through the second insulative material; and
etching the first insulative material to remove the first insulative material.