US 11,735,467 B2
Airgap formation processes
Ashish Pal, Hayward, CA (US); Gaurav Thareja, Santa Clara, CA (US); Sankuei Lin, Los Gatos, CA (US); Ching-Mei Hsu, Mountain View, CA (US); Nitin K. Ingle, San Jose, CA (US); Ajay Bhatnagar, Saratoga, CA (US); and Anchuan Wang, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 22, 2021, as Appl. No. 17/558,848.
Application 17/558,848 is a division of application No. 16/277,104, filed on Feb. 15, 2019, granted, now 11,211,286.
Claims priority of provisional application 62/631,179, filed on Feb. 15, 2018.
Prior Publication US 2022/0115263 A1, Apr. 14, 2022
Int. Cl. H01L 21/764 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01)
CPC H01L 21/764 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/41791 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a substrate;
a gate structure overlying the substrate and formed in a first direction across the substrate;
a fin overlying the substrate and formed in a second direction across the substrate, wherein the second direction is normal to the first direction, and wherein the fin intersects the gate structure;
a spacer structure adjacent the gate structure, wherein the spacer structure comprises:
a first layer adjacent the gate structure and extending a first distance laterally outward from the gate structure over the fin and the substrate; and
a second layer laterally outward from the first layer and contacting the first layer at the first distance, wherein an airgap is at least partially defined between a portion of the first layer adjacent the gate, a portion of the first layer overlying the substrate, and the second layer; and
a source/drain material formed about the fin external to the spacer structure, wherein at least one intervening layer of the spacer structure is included between the source/drain material and the airgap.