US 11,735,361 B2
Dielectric ceramic composition and multilayer ceramic capacitor comprising the same
Min Young Choi, Suwon-si (KR); Hyung Soon Kwon, Suwon-si (KR); Seung In Baik, Suwon-si (KR); and Ji Hong Jo, Suwon-si (KR)
Assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electro-Mechanics Co., Ltd., Suwon-si (KR)
Filed on Jul. 16, 2021, as Appl. No. 17/378,108.
Application 17/378,108 is a continuation of application No. 16/571,443, filed on Sep. 16, 2019, granted, now 11,127,532.
Claims priority of application No. 10-2019-0070178 (KR), filed on Jun. 13, 2019.
Prior Publication US 2021/0343477 A1, Nov. 4, 2021
Int. Cl. C04B 35/468 (2006.01); H01G 4/12 (2006.01); H01G 4/012 (2006.01); H01G 4/248 (2006.01); H01G 4/30 (2006.01)
CPC H01G 4/1227 (2013.01) [C04B 35/468 (2013.01); H01G 4/1272 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/401 (2013.01); C04B 2235/402 (2013.01); C04B 2235/428 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A multilayer ceramic capacitor, comprising:
a ceramic body comprising dielectric layers and first and second internal electrodes disposed to face each other with a respective dielectric layer interposed therebetween; and
a first external electrode and a second external electrode disposed on external surfaces of the ceramic body, the first external electrode being electrically connected to the first internal electrode and the second external electrode being electrically connected to the second internal electrode,
wherein the dielectric layers comprise dielectric grains comprising a dielectric ceramic composition,
the dielectric ceramic composition comprises a base material main ingredient including at least one compound selected from the group consisting of BaTiO3, (Ba1-xCax)(Ti1-yCay)O3 (where 0≤x≤0.3, 0≤y≤0.1), (Ba1-xCax)(Ti1-yZry)O3 (where 0≤x≤0.3, 0≤y≤0.5), and Ba(Ti1-yZry)O3 (where 0≤y≤0.5), and an accessory ingredient, the accessory ingredient comprising dysprosium (Dy) and niobium (Nb) as first accessory ingredients,
wherein a total content of the Dy and Nb is less than or equal to 1.5 mol, based on 100 mol of Ti of the base material main ingredient, and
wherein a thickness of at least one of the dielectric layers is 0.4 μm or less.