US 11,733,727 B2
Integrated circuit using bias current, bias current generating device, and operating method for the same
Junhan Bae, Hwaseong-si (KR); Gyeongseok Song, Busan (KR); Kyeong-Joon Ko, Yongin-si (KR); Jaehyun Park, Seoul (KR); Hajung Park, Suwon-si (KR); and Ho-Bin Song, Daejeon (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 25, 2022, as Appl. No. 17/680,386.
Claims priority of application No. 10-2021-0048184 (KR), filed on Apr. 14, 2021.
Prior Publication US 2022/0334605 A1, Oct. 20, 2022
Int. Cl. G05F 3/20 (2006.01); H03F 3/16 (2006.01); H03K 17/22 (2006.01)
CPC G05F 3/205 (2013.01) [H03F 3/16 (2013.01); H03K 17/223 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a peripheral circuit; and
a first bias current generating circuit,
wherein the first bias current generating circuit includes:
a first amplifier configured to receive a reference voltage and a first voltage, and to amplify a difference between the first voltage and the reference voltage to output a first output voltage;
a first bias current generator configured to receive the first output voltage, and to output a first bias current in response to the first output voltage;
a variable resistor configured to receive the first bias current from the first bias current generator, and to output said first voltage in response to the first bias current and a calibration code;
a second bias current generator configured to receive the first output voltage, and to output a second bias current to the peripheral circuit in response to the first output voltage; and
a third bias current generator configured to receive the first output voltage, and to output a third bias current to an external device through a first pad in response to the first output voltage.