US 11,733,186 B2
Device and method for analyzing a defect of a photolithographic mask or of a wafer
Gabriel Baralia, Dieburg (DE); Christof Baur, Darmstadt (DE); Klaus Edinger, Lorsch (DE); Thorsten Hofmann, Rodgau (DE); and Michael Budach, Hanau (DE)
Assigned to Carl Zeiss SMT GmbH, Oberkochen (DE)
Filed by Carl Zeiss SMT GmbH, Oberkochen (DE)
Filed on Apr. 1, 2021, as Appl. No. 17/220,330.
Application 17/220,330 is a continuation of application No. 15/481,693, filed on Apr. 7, 2017, granted, now 10,983,075.
Claims priority of application No. 102016205941.6 (DE), filed on Apr. 8, 2016.
Prior Publication US 2021/0247336 A1, Aug. 12, 2021
Int. Cl. G01N 23/2251 (2018.01); H01J 37/317 (2006.01); G03F 7/20 (2006.01); G03F 1/84 (2012.01); G01Q 30/04 (2010.01); G01Q 60/38 (2010.01); G02B 21/00 (2006.01); G03F 7/00 (2006.01); H01J 37/28 (2006.01); H01J 37/32 (2006.01); G01Q 80/00 (2010.01); G01Q 70/06 (2010.01)
CPC G01N 23/2251 (2013.01) [G01Q 30/04 (2013.01); G01Q 60/38 (2013.01); G02B 21/0016 (2013.01); G03F 1/84 (2013.01); G03F 7/7065 (2013.01); H01J 37/28 (2013.01); H01J 37/3178 (2013.01); H01J 37/32366 (2013.01); G01N 2223/6116 (2013.01); G01N 2223/646 (2013.01); G01Q 70/06 (2013.01); G01Q 80/00 (2013.01); H01J 2237/2814 (2013.01); H01J 2237/334 (2013.01)] 32 Claims
OG exemplary drawing
 
1. A method for analyzing at least one defect of a photolithographic mask or of a wafer using a measuring system, the measuring system comprising at least one scanning probe microscope and at least one scanning particle beam microscope, the method comprising:
a. analyzing the at least one defect using at least one probe of the at least one scanning probe microscope, wherein analyzing the at least one defect comprises determining topography data of the at least one defect;
b. producing at least one mark on the photolithographic mask or on the wafer using the at least one scanning probe microscope, wherein the at least one mark is embodied in a way that it can be detected by at least one particle beam of the at least one scanning particle beam microscope; and
c. detecting the at least one mark using the at least one particle beam of the at least one scanning particle beam microscope.
 
13. A measuring system for analyzing at least one defect of a photolithographic mask or of a wafer comprising:
a. at least one scanning probe microscope having a probe arrangement, wherein the probe arrangement comprises at least one first probe embodied to analyze the at least one defect, wherein analyzing the at least one defect comprises determining topography data of the at least one defect;
b. the at least one scanning probe microscope having means for producing at least one mark, by use of which a position of the at least one defect on the photolithographic mask or on the wafer is indicated; and
c. at least one scanning particle beam microscope embodied to detect the at least one mark.
 
21. A method for analyzing at least one defect of a photolithographic mask or of a wafer, the method comprising:
a. analyzing the at least one defect using at least one scanning probe microscope;
b. producing at least one mark on the photolithographic mask or on the wafer using the at least one scanning probe microscope, wherein the at least one mark is embodied in a way that it can be detected by at least one scanning particle beam microscope; and
c. detecting the at least one mark using at least one particle beam of the at least one scanning particle beam microscope.