US 11,732,356 B2
Multilayer encapsulation stacks by atomic layer deposition
Cong Trinh, Santa Clara, CA (US); Mihaela A. Balseanu, Sunnyvale, CA (US); Maribel Maldonado-Garcia, San Jose, CA (US); Ning Li, San Jose, CA (US); Mark Saly, Santa Clara, CA (US); Bhaskar Jyoti Bhuyan, San Jose, CA (US); Keenan N. Woods, San Ramon, CA (US); and Lisa J. Enman, Sunnyvale, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 29, 2020, as Appl. No. 16/941,843.
Claims priority of provisional application 62/879,680, filed on Jul. 29, 2019.
Prior Publication US 2021/0032749 A1, Feb. 4, 2021
Int. Cl. C23C 16/455 (2006.01); C23C 16/02 (2006.01); H01L 21/56 (2006.01); H10N 70/00 (2023.01)
CPC C23C 16/45542 (2013.01) [C23C 16/0209 (2013.01); C23C 16/45546 (2013.01); C23C 16/45553 (2013.01); H01L 21/56 (2013.01); H10N 70/023 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A method of forming an encapsulation stack, the method comprising:
providing a substrate with a surface having at least one feature thereon, the surface comprising a film stack with a first exposed material and a second exposed material, the first exposed material comprising carbon and the second exposed material comprising a chalcogen, the feature having a height and width defining an aspect ratio;
forming a conformal dielectric protective layer directly on the first exposed material and the second exposed material by sequentially exposing the substrate to a first reactant and a second reactant, the protective layer comprising silicon nitride, and the first reactant comprising SiRaXb, where R is an organic group or H, X is a halogen, and a+b=4; and
forming a conformal hermetic encapsulation layer on the protective layer by sequentially exposing the substrate to a silicon precursor and a nitrogen precursor and a second plasma, the encapsulation layer comprising silicon nitride, wherein the substrate is maintained at a temperature less than or equal to about 250° C.,
wherein the protective layer is formed at a rate of greater than or equal to about 1 Å/min and the protective layer is formed without damaging the second exposed material.