US 11,731,125 B2
Patterning method of film, microfluidic device and manufacturing method thereof
Yue Geng, Beijing (CN); Yuelei Xiao, Beijing (CN); Hui Liao, Beijing (CN); Peizhi Cai, Beijing (CN); Jian Li, Beijing (CN); and Shenkang Wu, Beijing (CN)
Assigned to BEIJING BOE SENSOR TECHNOLOGY CO., LTD., Beijing (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 16/639,867
Filed by BEIJING BOE SENSOR TECHNOLOGY CO., LTD., Beijing (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Jan. 3, 2019, PCT No. PCT/CN2019/070242
§ 371(c)(1), (2) Date Feb. 18, 2020,
PCT Pub. No. WO2020/140231, PCT Pub. Date Jul. 9, 2020.
Prior Publication US 2021/0129139 A1, May 6, 2021
Int. Cl. B01L 3/00 (2006.01); B81C 1/00 (2006.01)
CPC B01L 3/502707 (2013.01) [B81C 1/00071 (2013.01); B01L 2200/12 (2013.01); B01L 2300/12 (2013.01); B01L 2400/086 (2013.01); B81C 2201/0133 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A patterning method of a film, comprising:
providing a film comprising a first surface;
forming n etching barrier layers on the first surface of the film, wherein n is an integer larger than or equal to 2; and
performing n etching processes on the film to form a recessed structure on the first surface using the n etching barrier layers as masks, wherein the recessed structure comprises n kinds of bottom surfaces respectively having n kinds of depths different from each other, each of the depths is a distance from a respective bottom surface of the n bottom surfaces to the first surface in a direction perpendicular to the film, wherein
two adjacent etching processes of the n etching processes comprise a previous etching process and a subsequent etching process, and after the previous etching process is completed, a part of the n etching barrier layers is removed to form a mask for the subsequent etching process;
after the previous etching process is completed, a material of the part of the n etching barrier layers which is removed is at least partially different from a material of the mask of the subsequent etching process;
the n etching barrier layers comprise two adjacent etching barrier layers, the two adjacent etching barrier layers are stacked and comprise an etching barrier layer close to the film and an etching barrier layer away from the film,
an orthographic projection of a part of the etching barrier layer away from the film on the film overlaps with the an orthographic projection of the etching barrier layer close to the film on the film, and an orthographic projection of another part of the etching barrier layer away from the film on the film does not overlap with the orthographic projection of the etching barrier layer close to the film on the film;
the part of the n etching barrier layers which is removed after the previous etching process is completed is the etching barrier layer away from the film;
the etching barrier layer close to the film comprises a first upper part covering the first surface of the film and a first side part covering an outer side surface of the film, the outer side surface of the film is on an outer edge, away from the recessed structure, of the film and intersects with the first surface; and
the etching barrier layer away from the film comprises a second upper part covering an upper surface, away from the film, of the first upper part and comprises a second side part covering an outer side surface of the first side part, and the outer side surface of the first side part intersects with the upper surface of the first upper part.