US 11,730,062 B2
Electronic device including thermal stability enhanced layer including homogeneous material having Fe-O bond
Tae Young Lee, Gyeonggi-do (KR); Guk Cheon Kim, Gyeonggi-do (KR); Soo Gil Kim, Gyeonggi-do (KR); Soo Man Seo, Gyeonggi-do (KR); Jong Koo Lim, Gyeonggi-do (KR); and Taiga Isoda, Tokyo (JP)
Assigned to SK hynix Inc., Gyeonggi-do (KR); and Kioxia Corporation, Tokyo (JP)
Filed by SK hynix Inc., Gyeonggi-do (KR); and Kioxia Corporation, Tokyo (JP)
Filed on Sep. 25, 2020, as Appl. No. 17/32,938.
Claims priority of application No. 10-2019-0166407 (KR), filed on Dec. 13, 2019.
Prior Publication US 2021/0184102 A1, Jun. 17, 2021
Int. Cl. H10N 50/80 (2023.01); G11C 11/16 (2006.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [G11C 11/161 (2013.01); H10N 50/85 (2023.02)] 17 Claims
OG exemplary drawing
 
1. An electronic device comprising a semiconductor memory, wherein the semiconductor memory includes:
a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and
a thermal stability enhanced layer (TSEL) including a homogeneous material having an Fe—O bond,
wherein the semiconductor memory includes a synthetic antiferromagnet (SAF) structure disposed over the tunnel barrier layer and the TSEL is disposed under the free layer.