US 11,730,001 B2
Tunnel magnetoresistive effect element, magnetic memory, and built-in memory
Zhenyao Tang, Tokyo (JP); and Tomoyuki Sasaki, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Jun. 8, 2022, as Appl. No. 17/835,458.
Application 17/835,458 is a continuation of application No. 17/089,194, filed on Nov. 4, 2020, granted, now 11,373,915.
Application 17/089,194 is a continuation of application No. 16/795,714, filed on Feb. 20, 2020, granted, now 10,861,754, issued on Dec. 8, 2020.
Application 16/795,714 is a continuation of application No. 16/082,914, granted, now 10,607,898, issued on Mar. 31, 2020, previously published as PCT/JP2017/040293, filed on Nov. 8, 2017.
Prior Publication US 2022/0301935 A1, Sep. 22, 2022
Int. Cl. H10B 99/00 (2023.01); G01R 33/09 (2006.01); H01L 27/105 (2023.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC H10B 99/00 (2023.02) [G01R 33/093 (2013.01); G01R 33/098 (2013.01); H01L 27/105 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A tunnel magnetoresistive effect element comprising:
a lower electrode layer;
an upper electrode layer;
a stack portion including a magnetic tunnel junction arranged between the lower electrode layer and the upper electrode layer; and
a minute particle region
arranged outside of the magnetic tunnel junction,
including a region extending in a direction perpendicular to a stack direction of the stack portion, and
including a plurality of minute metal particles dispersed in an insulation material.