CPC H10B 99/00 (2023.02) [G01R 33/093 (2013.01); G01R 33/098 (2013.01); H01L 27/105 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] | 21 Claims |
1. A tunnel magnetoresistive effect element comprising:
a lower electrode layer;
an upper electrode layer;
a stack portion including a magnetic tunnel junction arranged between the lower electrode layer and the upper electrode layer; and
a minute particle region
arranged outside of the magnetic tunnel junction,
including a region extending in a direction perpendicular to a stack direction of the stack portion, and
including a plurality of minute metal particles dispersed in an insulation material.
|