CPC H10B 43/40 (2023.02) [H01L 23/528 (2013.01); H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 41/50 (2023.02); H10B 43/27 (2023.02); H10B 43/50 (2023.02)] | 18 Claims |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a peripheral circuit;
forming a first interconnection structure that is electrically coupled to the peripheral circuit;
forming a decoupling structure having an electrically floating state over the first interconnection structure; and
forming a cell array over the decoupling structure.
|