CPC H10B 43/35 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02)] | 16 Claims |
1. A method of forming an integrated assembly, comprising:
forming a vertical stack of alternating first and second levels; the first levels comprising first material and the second levels comprising second material;
forming an opening to extend through the stack;
forming charge-storage material, tunneling material and channel material within the opening;
forming slits to extend through the stack;
flowing etchant into the slits to remove the second material and leave first voids between the first levels;
forming conductive structures within the first voids; the conductive structures having proximal ends adjacent the channel material, and having distal ends adjacent the slits;
removing the first material to leave second voids between the conductive structures;
forming insulative liners within the second voids to line the second voids, regions of the insulative liners being along the distal ends of the conductive structures;
forming sacrificial material within the lined second voids and over the regions of the insulative liners along the distal ends of the conductive structures;
recessing the sacrificial material to expose the regions of the insulative liners along the distal ends of the conductive structures;
removing the exposed regions of the insulative liners to expose the distal ends of the conductive structures;
removing the sacrificial material to reopen the second voids; the reopened second voids having end regions along the slit; and
forming insulative material within the slits; the insulative material being formed selectively along the conductive material relative to the insulative liners, and extending across the end regions of the reopened second voids.
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