US 11,729,982 B2
Integrated assemblies and methods of forming integrated assemblies
Shyam Surthi, Boise, ID (US); and Richard J. Hill, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 21, 2021, as Appl. No. 17/507,660.
Application 17/507,660 is a division of application No. 16/863,120, filed on Apr. 30, 2020, granted, now 11,189,629.
Prior Publication US 2022/0045072 A1, Feb. 10, 2022
Int. Cl. H01L 27/11582 (2017.01); H10B 43/35 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01)
CPC H10B 43/35 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A method of forming an integrated assembly, comprising:
forming a vertical stack of alternating first and second levels; the first levels comprising first material and the second levels comprising second material;
forming an opening to extend through the stack;
forming charge-storage material, tunneling material and channel material within the opening;
forming slits to extend through the stack;
flowing etchant into the slits to remove the second material and leave first voids between the first levels;
forming conductive structures within the first voids; the conductive structures having proximal ends adjacent the channel material, and having distal ends adjacent the slits;
removing the first material to leave second voids between the conductive structures;
forming insulative liners within the second voids to line the second voids, regions of the insulative liners being along the distal ends of the conductive structures;
forming sacrificial material within the lined second voids and over the regions of the insulative liners along the distal ends of the conductive structures;
recessing the sacrificial material to expose the regions of the insulative liners along the distal ends of the conductive structures;
removing the exposed regions of the insulative liners to expose the distal ends of the conductive structures;
removing the sacrificial material to reopen the second voids; the reopened second voids having end regions along the slit; and
forming insulative material within the slits; the insulative material being formed selectively along the conductive material relative to the insulative liners, and extending across the end regions of the reopened second voids.