CPC H10B 43/27 (2023.02) [H10B 41/20 (2023.02); H10B 41/30 (2023.02)] | 11 Claims |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a stack body in which interlayer insulating films and sacrificial films are alternately stacked;
forming a hole penetrating the stack body;
forming a first material film on an inner wall of the hole;
forming a channel structure in a center region of the hole opened by the first material film;
removing the sacrificial films of the stack body to form opening portions exposing the first material film;
removing exposed regions of the first material film through the opening portions so that the first material film is separated into first material patterns;
forming second material patterns by oxidizing a portion of the first material patterns from an etched surface of each of the first material patterns; and
forming gate electrodes filling the opening portions and extending between the second material patterns.
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