US 11,729,981 B2
Semiconductor device and method of manufacturing the same
Moon Sik Seo, Gyeonggi-do (KR); and Gil Bok Choi, Daejeon (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Mar. 29, 2022, as Appl. No. 17/707,469.
Application 17/707,469 is a continuation of application No. 16/661,291, filed on Oct. 23, 2019, granted, now 11,315,944.
Claims priority of application No. 10-2019-0068902 (KR), filed on Jun. 11, 2019.
Prior Publication US 2022/0223620 A1, Jul. 14, 2022
Int. Cl. H10B 43/27 (2023.01); H10B 41/20 (2023.01); H10B 41/30 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/20 (2023.02); H10B 41/30 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a stack body in which interlayer insulating films and sacrificial films are alternately stacked;
forming a hole penetrating the stack body;
forming a first material film on an inner wall of the hole;
forming a channel structure in a center region of the hole opened by the first material film;
removing the sacrificial films of the stack body to form opening portions exposing the first material film;
removing exposed regions of the first material film through the opening portions so that the first material film is separated into first material patterns;
forming second material patterns by oxidizing a portion of the first material patterns from an etched surface of each of the first material patterns; and
forming gate electrodes filling the opening portions and extending between the second material patterns.