US 11,729,976 B2
Semiconductor devices including upper and lower selectors
Kohji Kanamori, Seongnam-si (KR); Yong Seok Kim, Suwon-si (KR); Kyung Hwan Lee, Hwaseong-si (KR); Jun Hee Lim, Seoul (KR); and Jee Hoon Han, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 8, 2021, as Appl. No. 17/370,628.
Application 17/370,628 is a continuation of application No. 16/527,506, filed on Jul. 31, 2019, granted, now 11,088,163.
Claims priority of application No. 10-2019-0030843 (KR), filed on Mar. 19, 2019.
Prior Publication US 2021/0335819 A1, Oct. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 43/27 (2023.01); H01L 23/528 (2006.01); H01L 25/18 (2023.01); H01L 25/00 (2006.01); G11C 16/08 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); G11C 16/04 (2006.01); H10B 43/40 (2023.01)
CPC H10B 43/27 (2023.02) [G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H01L 23/528 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 29/1037 (2013.01); H01L 29/7827 (2013.01); H10B 43/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first stack structure including an alternating stack of a plurality of first word lines and a plurality of first insulating layers;
a plurality of first channel structures extending through the first stack structure;
a second stack structure on the first stack structure, the second stack structure including an alternating stack of a plurality of second word lines and a plurality of second insulating layers;
a plurality of second channel structures extending through the second stack structure, each of the plurality of second channel structures being offset from each of the plurality of first channel structures;
a plurality of first selectors connected to the plurality of first word lines;
a plurality of second selectors connected to the plurality of second word lines;
a plurality of first conductive pads disposed on the second stack structure, each of the plurality of first conductive pads being connected to a corresponding one of the plurality of first selectors and the plurality of second selectors;
a plurality of second conductive pads disposed on the plurality of first conductive pads, each of the plurality of second conductive pads being in direct contact with a corresponding one of the plurality of first conductive pads; and
a decoder disposed on the plurality of second conductive pads and connected to the plurality of second conductive pads.