US 11,729,975 B2
Semiconductor memory
Tsuyoshi Sugisaki, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Apr. 1, 2021, as Appl. No. 17/220,182.
Application 17/220,182 is a continuation of application No. 16/109,392, filed on Aug. 22, 2018, granted, now 10,998,332.
Claims priority of application No. 2018-048012 (JP), filed on Mar. 15, 2018.
Prior Publication US 2021/0217774 A1, Jul. 15, 2021
Int. Cl. H01L 27/115 (2017.01); H10B 43/27 (2023.01); G11C 7/18 (2006.01); G11C 8/14 (2006.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [G11C 7/18 (2013.01); G11C 8/14 (2013.01); H10B 43/35 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A semiconductor memory comprising:
a stack comprising a first region and a second region different from the first region, the first region including a plurality of first conductors and a plurality of first insulators alternately stacked in a first direction;
a first insulator portion and a second insulator portion respectively extending within the second region in the first direction and a second direction crossing the first direction, the first and second insulating portions being arranged in a third direction crossing the first and second directions; and
a plurality of layers provided between the first insulator portion and the second insulator portion, each of the plurality of layers being between adjacent two of the plurality of first insulators, a material of the plurality of layers being different from a material of the plurality of first conductors.