CPC H10B 12/30 (2023.02) [H01L 28/40 (2013.01); H01L 29/0673 (2013.01); H01L 29/0684 (2013.01); H01L 29/42392 (2013.01); H01L 29/7869 (2013.01); H01L 29/78654 (2013.01); H01L 29/78672 (2013.01); H01L 29/78696 (2013.01); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10B 12/48 (2023.02); H10B 12/482 (2023.02); H10B 12/50 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02)] | 32 Claims |
23. A memory cell, comprising:
a substrate;
a bit line vertically oriented from the substrate along a first direction;
at least two nanosheets horizontally oriented from the bit line along a second direction perpendicular to the first direction;
a word line including a surrounding portion surrounding the at least two nanosheets and a first buried portion, and a second buried portion extending from the surrounding portion along the second direction;
a first doped portion horizontally oriented from a first side of the nanosheets, connected to the bit line, and surrounding the first buried portion;
a second doped portion horizontally oriented from a second side of the nano sheets and surrounding the second buried portion; and
a capacitor horizontally oriented from the second doped portion along the second direction.
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