CPC H04N 25/76 (2023.01) [H01L 27/14607 (2013.01); H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); H04N 25/60 (2023.01); H04N 25/75 (2023.01); H04N 25/77 (2023.01); H01L 27/14689 (2013.01)] | 16 Claims |
1. A light detecting device, comprising:
a semiconductor layer including a first surface side and a second surface side, wherein the first surface side is opposite to the second surface side;
a first photoelectric conversion portion in the semiconductor layer;
a first transfer transistor at the first surface side;
a first floating diffusion region in the semiconductor layer; and
a pixel transistor below the first surface side, wherein
the pixel transistor includes a fin type gate electrode,
the first photoelectric conversion portion and the first transfer transistor are in a first region of the light detecting device, and
the pixel transistor is in a second region of the light detecting device.
|