US 11,728,795 B2
Voltage level shifter cell and integrated circuit including the same
Chanhee Park, Incheon (KR); Ahreum Kim, Daegu (KR); and Minsu Kim, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 29, 2021, as Appl. No. 17/564,915.
Claims priority of application No. 10-2021-0023689 (KR), filed on Feb. 22, 2021.
Prior Publication US 2022/0271742 A1, Aug. 25, 2022
Int. Cl. H03K 19/0175 (2006.01); H03K 3/356 (2006.01); H01L 27/02 (2006.01); G06F 30/30 (2020.01)
CPC H03K 3/356113 (2013.01) [G06F 30/30 (2020.01); H01L 27/0207 (2013.01); H03K 19/0175 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A voltage level shifter cell configured to convert voltage levels of input signals of multi-bits, the voltage level shifter cell comprising:
a first circuit area including a first voltage level shifter configured to convert a 1-bit first input signal from among the input signals; and
a second circuit area including a second voltage level shifter configured to convert a 1-bit second input signal from among the input signals,
wherein the first circuit area and the second circuit area share a first N-well to which a first power voltage is applied, and the first circuit area and the second circuit area share a second N-well to which a second power voltage is applied,
wherein the first N-well is formed to extend in a first direction, and the first N-well and the second N-well are arranged to overlap in a second direction crossing the first direction.