US 11,728,625 B2
Light emitting element
Tatsushi Hamaguchi, Kanagawa (JP); Jugo Mitomo, Kanagawa (JP); and Rintaro Koda, Tokyo (JP)
Assigned to Sony Corporation, Tokyo (JP)
Appl. No. 16/956,376
Filed by Sony Corporation, Tokyo (JP)
PCT Filed Dec. 11, 2018, PCT No. PCT/JP2018/045490
§ 371(c)(1), (2) Date Jun. 19, 2020,
PCT Pub. No. WO2019/124163, PCT Pub. Date Jun. 27, 2019.
Claims priority of application No. 2017-245998 (JP), filed on Dec. 22, 2017.
Prior Publication US 2020/0343694 A1, Oct. 29, 2020
Int. Cl. H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01)
CPC H01S 5/34333 (2013.01) [H01S 5/0206 (2013.01); H01S 5/0207 (2013.01); H01S 5/0208 (2013.01); H01S 5/04257 (2019.08); H01S 5/18361 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A light emitting element comprising:
a compound semiconductor substrate;
a stacked structure including a GaN-based compound semiconductor;
a first light reflection layer; and
a second light reflection layer,
wherein the stacked structure includes, in a stacked state
a first compound semiconductor layer that is formed on the compound semiconductor substrate and that has a first surface and a second surface opposite to the first surface,
an active layer facing the second surface of the first compound semiconductor layer, and
a second compound semiconductor layer that has a first surface facing the active layer and a second surface opposite to the first surface,
the first light reflection layer is disposed on the compound semiconductor substrate and has a concave mirror section,
the second light reflection layer is disposed on the second surface side of the second compound semiconductor layer and has a flat shape, and
the compound semiconductor substrate includes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate,
wherein the second compound semiconductor layer is provided with a current injection region and a current non-injection region surrounding the current injection region, and
a shortest distance DCI from an area center of gravity of the current injection region to a boundary between the current injection region and the current non-injection region satisfies the following formula:
DCI≥ω0/2
provided that
ω02≡(λ0/π){LOR(RDBR−LOR}1/2
where
λ0: wavelength of light mainly emitted from light emitting element
LOR: cavity length
RDBR: radius of curvature of concave mirror section of first light reflection layer.