CPC H01S 5/0215 (2013.01) [H01S 5/021 (2013.01); H01S 5/0218 (2013.01); H01S 5/042 (2013.01); H01S 5/343 (2013.01); H01S 5/3412 (2013.01); H01S 5/4025 (2013.01); G02B 6/42 (2013.01); G02B 6/4234 (2013.01)] | 19 Claims |
1. A method, comprising:
forming a silicon substrate comprising a bonding layer, wherein the bonding layer comprises a doped surface;
forming a III-V semiconductor material structure comprising a grown active layer, wherein the III-V semiconductor material structure further comprises a degenerately doped bonding surface;
bonding the III-V semiconductor material structure to the bonding layer of the silicon substrate to create a bonded structure, wherein the degenerately doped bonding surface provides a conductive bond between the silicon substrate and the III-V semiconductor material structure; and
forming a laser integrated photonic platform in the bonded structure.
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