US 11,728,616 B2
III-V laser platforms on silicon with through silicon vias by wafer scale bonding
Jock T. Bovington, La Mesa, CA (US); Vipulkumar K. Patel, Breinigsville, PA (US); and Dominic F. Siriani, Lansdale, PA (US)
Assigned to Cisco Technology, Inc., San Jose, CA (US)
Filed by Cisco Technology, Inc., San Jose, CA (US)
Filed on Aug. 2, 2021, as Appl. No. 17/444,202.
Application 17/444,202 is a division of application No. 16/234,105, filed on Dec. 27, 2018, granted, now 11,081,856.
Prior Publication US 2021/0359490 A1, Nov. 18, 2021
Int. Cl. H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01); H01S 5/40 (2006.01); H01S 5/34 (2006.01); G02B 6/42 (2006.01)
CPC H01S 5/0215 (2013.01) [H01S 5/021 (2013.01); H01S 5/0218 (2013.01); H01S 5/042 (2013.01); H01S 5/343 (2013.01); H01S 5/3412 (2013.01); H01S 5/4025 (2013.01); G02B 6/42 (2013.01); G02B 6/4234 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a silicon substrate comprising a bonding layer, wherein the bonding layer comprises a doped surface;
forming a III-V semiconductor material structure comprising a grown active layer, wherein the III-V semiconductor material structure further comprises a degenerately doped bonding surface;
bonding the III-V semiconductor material structure to the bonding layer of the silicon substrate to create a bonded structure, wherein the degenerately doped bonding surface provides a conductive bond between the silicon substrate and the III-V semiconductor material structure; and
forming a laser integrated photonic platform in the bonded structure.