US 11,728,465 B2
Display device including a light emitting diode chip
Young Hyun Kim, Ansan-si (KR); Motonobu Takeya, Ansan-si (KR); Jong Ik Lee, Ansan-si (KR); and Sung Su Son, Ansan-si (KR)
Assigned to Seoul Semiconductor Co., Ltd., Ansan-si (KR)
Filed by Seoul Semiconductor Co., Ltd., Ansan-si (KR)
Filed on May 12, 2021, as Appl. No. 17/318,542.
Application 17/318,542 is a continuation of application No. 16/495,741, granted, now 11,018,285, previously published as PCT/KR2018/002690, filed on Mar. 7, 2018.
Claims priority of provisional application 62/475,414, filed on Mar. 23, 2017.
Prior Publication US 2021/0265547 A1, Aug. 26, 2021
Int. Cl. H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 33/0093 (2020.05); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A display apparatus comprising a light emitting diode chip,
wherein:
the light emitting diode chip comprises:
a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers;
a first electrode electrically connected to the first conductivity type semiconductor layer;
a second electrode electrically connected to the second conductivity type semiconductor layer;
an insulator covering portions of upper surfaces of the first and second electrodes and portions of side surfaces of the light emitting structure; and
couplers disposed on the first and second electrodes and side surfaces of the light emitting structure;
the insulator is disposed between the couplers and the light emitting chip; and
the light emitting structure is separated from a growth substrate so that a bottom surface of the first conductivity type semiconductor layer is exposed.