US 11,728,461 B2
Single light emitting diode (LED) structure having epitaxial structure separated into light emitting zones
Trung Tri Doan, Hsinchu (TW); and David Trung Doan, Hsinchu (TW)
Assigned to SemiLEDs Optoelectronics Co., Ltd., Chu-Nan (TW)
Filed by SemiLEDs Optoelectronics Co., Ltd., Chu-nan (TW)
Filed on Dec. 7, 2020, as Appl. No. 17/113,386.
Application 17/113,386 is a continuation of application No. 16/114,377, filed on Aug. 28, 2018, granted, now 10,964,851.
Claims priority of provisional application 62/551,859, filed on Aug. 30, 2017.
Prior Publication US 2021/0119088 A1, Apr. 22, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/50 (2010.01); H01L 33/10 (2010.01); H01L 27/15 (2006.01); H01L 25/075 (2006.01); H01L 33/40 (2010.01); H01L 33/08 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/50 (2013.01) [H01L 27/153 (2013.01); H01L 33/10 (2013.01); H01L 33/504 (2013.01); H01L 25/0753 (2013.01); H01L 33/08 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A single light emitting diode (LED) structure comprising:
a single epitaxial structure separated into a plurality of separate light emitting zones, the epitaxial structure comprising an n-type layer, a p-type layer, and an active layer configured to emit an emitting light having a particular wavelength, each light emitting zone comprising a portion of the epitaxial structure geometrically configured with an effective emission area, the n-type layer and the p-type layer configuring each light emitting zone as a discrete, controllable light emitting unit configured to provide a controllable light intensity for each light emitting zone;
a plurality of insulation layers on the epitaxial structure configured to electrically separate the light emitting zones;
a wavelength conversion member on the effective emission area of at least one light emitting zone configured to convert an emitting wavelength of the emitting light to a different color for the at least one light emitting zone; and
a metal layer on the epitaxial structure configured as a common cathode in electrical communication with the light emitting zones.