US 11,728,458 B2
Semiconductor light-emitting device
Hideto Sugawara, Nonoichi Ishikawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Aug. 30, 2021, as Appl. No. 17/461,874.
Claims priority of application No. 2021-005297 (JP), filed on Jan. 15, 2021.
Prior Publication US 2022/0231191 A1, Jul. 21, 2022
Int. Cl. H01L 33/04 (2010.01); H01L 33/30 (2010.01)
CPC H01L 33/04 (2013.01) [H01L 33/30 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting device, the device comprising:
a semiconductor substrate; and
a light-emitting layer provided on the semiconductor substrate,
the light-emitting layer including at least one quantum well layer and barrier layers alternately stacked in a first direction directed from the semiconductor substrate toward the light-emitting layer,
the quantum well layer including a first semiconductor mixed crystal having a larger lattice constant than a lattice constant of the semiconductor substrate,
the quantum well layer having a first layer thickness in the first direction and including a first strain amount, the first strain amount being a product of the first layer thickness and a first strain ratio, the first strain ratio being obtained by dividing an absolute value of a difference between the lattice constant of the substrate and a lattice spacing of the first semiconductor mixed crystal in the first direction by the lattice spacing of the first semiconductor mixed crystal,
the barrier layers each including a second semiconductor mixed crystal having a smaller lattice constant than the lattice constant of the semiconductor substrate,
the barrier layer each having a second layer thickness in the first direction and including a second strain amount, the second strain amount being a product of the second layer thickness and a second strain ratio, the second strain ratio being obtained by dividing an absolute value of a difference between the lattice constant of the substrate and a lattice spacing of the second semiconductor mixed crystal in the first direction by the lattice spacing of the second semiconductor mixed crystal,
the quantum well layer and the barrier layers being provided such that the first strain amount is greater than the second strain amount.