US 11,728,457 B2
Nano-scale LED element for horizontally-aligned assembly, method for manufacturing same, and horizontally-aligned assembly comprising same
Yeon Goog Sung, Gyeonggi-do (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on Feb. 1, 2021, as Appl. No. 17/164,763.
Application 17/164,763 is a continuation of application No. 15/528,046, granted, now 10,910,512, previously published as PCT/KR2015/012252, filed on Nov. 13, 2015.
Claims priority of application No. 10-2014-0161067 (KR), filed on Nov. 18, 2014.
Prior Publication US 2021/0151624 A1, May 20, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); B82B 3/00 (2006.01); H01L 33/32 (2010.01)
CPC H01L 33/0075 (2013.01) [H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); B82B 3/0052 (2013.01); H01L 33/32 (2013.01); H01L 33/385 (2013.01); H01L 2224/95085 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A light-emitting element comprising:
a first semiconductor layer;
a second semiconductor layer;
an active layer between the first semiconductor layer and the second semiconductor layer; and
an electrode layer directly on at least one of the first semiconductor layer or the second semiconductor layer,
wherein the electrode layer comprises a first surface contacting the first semiconductor layer or the second semiconductor layer, and a second surface opposite the first surface, and
wherein the second surface has a curved portion in one direction in which the first semiconductor layer, the active layer, and the second semiconductor layer are arranged, wherein the light-emitting element extends in the one direction, the curved portion terminating at a location adjacent to one of the first semiconductor layer or the second semiconductor layer that contacts the first surface of the electrode layer.